JPH0150112B2 - - Google Patents

Info

Publication number
JPH0150112B2
JPH0150112B2 JP60283178A JP28317885A JPH0150112B2 JP H0150112 B2 JPH0150112 B2 JP H0150112B2 JP 60283178 A JP60283178 A JP 60283178A JP 28317885 A JP28317885 A JP 28317885A JP H0150112 B2 JPH0150112 B2 JP H0150112B2
Authority
JP
Japan
Prior art keywords
semiconductor
layer
region
channel region
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60283178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61154155A (ja
Inventor
Jayaraman Rajisekaaru
Mana Shingaa Barii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS61154155A publication Critical patent/JPS61154155A/ja
Publication of JPH0150112B2 publication Critical patent/JPH0150112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP60283178A 1984-12-21 1985-12-18 導電率を増した組合せ横形ｍｏｓ／バイポーラトランジスタを有する半導体デバイス Granted JPS61154155A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/684,442 US4609929A (en) 1984-12-21 1984-12-21 Conductivity-enhanced combined lateral MOS/bipolar transistor
US684442 2000-10-06

Publications (2)

Publication Number Publication Date
JPS61154155A JPS61154155A (ja) 1986-07-12
JPH0150112B2 true JPH0150112B2 (en]) 1989-10-27

Family

ID=24748076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60283178A Granted JPS61154155A (ja) 1984-12-21 1985-12-18 導電率を増した組合せ横形ｍｏｓ／バイポーラトランジスタを有する半導体デバイス

Country Status (5)

Country Link
US (1) US4609929A (en])
EP (1) EP0185415B1 (en])
JP (1) JPS61154155A (en])
CA (1) CA1230429A (en])
DE (1) DE3579675D1 (en])

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US4890150A (en) * 1985-12-05 1989-12-26 North American Philips Corporation Dielectric passivation
US4816882A (en) * 1986-03-10 1989-03-28 Siliconix Incorporated Power MOS transistor with equipotential ring
US4798810A (en) * 1986-03-10 1989-01-17 Siliconix Incorporated Method for manufacturing a power MOS transistor
US4978628A (en) * 1986-11-19 1990-12-18 Teledyne Industries, Inc. Drail-well/extension high voltage MOS transistor structure and method of fabrication
JPS63153910A (ja) * 1986-12-17 1988-06-27 Nec Corp レベルシフト回路
US4712124A (en) * 1986-12-22 1987-12-08 North American Philips Corporation Complementary lateral insulated gate rectifiers with matched "on" resistances
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
JP3097092B2 (ja) * 1989-04-21 2000-10-10 日本電気株式会社 Ｂｉ―ＣＭＯＳ集積回路およびその製造方法
US5162888A (en) * 1989-05-12 1992-11-10 Western Digital Corporation High DC breakdown voltage field effect transistor and integrated circuit
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
GB9106108D0 (en) * 1991-03-22 1991-05-08 Philips Electronic Associated A lateral insulated gate field effect semiconductor device
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6566709B2 (en) * 1996-01-22 2003-05-20 Fuji Electric Co., Ltd. Semiconductor device
EP1029358A1 (de) * 1997-11-03 2000-08-23 Infineon Technologies AG Hochspannungsfeste randstruktur für halbleiterbauelemente
DE10111152C2 (de) * 2001-03-08 2003-02-06 Infineon Technologies Ag Halbleiterbauelement mit isolierter Basis
JP3546037B2 (ja) * 2001-12-03 2004-07-21 松下電器産業株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
CA1200620A (en) * 1982-12-21 1986-02-11 Sel Colak Lateral dmos transistor devices suitable for source- follower applications
DE3477313D1 (en) * 1983-12-16 1989-04-20 Philips Nv Semiconductor device comprising a combined bipolar-field effect transistor

Also Published As

Publication number Publication date
EP0185415A3 (en) 1988-08-31
EP0185415A2 (en) 1986-06-25
EP0185415B1 (en) 1990-09-12
JPS61154155A (ja) 1986-07-12
CA1230429A (en) 1987-12-15
US4609929A (en) 1986-09-02
DE3579675D1 (de) 1990-10-18

Similar Documents

Publication Publication Date Title
US4639761A (en) Combined bipolar-field effect transistor resurf devices
JPH0150112B2 (en])
US5146298A (en) Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor
US4485392A (en) Lateral junction field effect transistor device
US5574301A (en) Vertical switched-emitter structure with improved lateral isolation
US6091107A (en) Semiconductor devices
US4989058A (en) Fast switching lateral insulated gate transistors
GB2080023A (en) Lateral insulated gate field effect transistor
JPH0758784B2 (ja) ラッチ・アップ防止性能を改良したラテラル形絶縁ゲート・バイポーラ・トランジスタ
EP0228107B1 (en) Fast switching lateral insulated gate transistors
EP0114435B1 (en) Lateral dmos transistor devices suitable for sourcefollower applications
KR100278526B1 (ko) 반도체 소자
JPH0783120B2 (ja) バイポーラ型半導体スイッチング装置
EP0146181B1 (en) Semiconductor device comprising a combined bipolar-field effect transistor
EP0115098B1 (en) Lateral dmos transistor device having an injector region
JP2018041983A (ja) 半導体装置
US4987469A (en) Lateral high-voltage transistor suitable for use in emitter followers
JP2502696B2 (ja) 半導体集積回路装置
JP2536137B2 (ja) 伝導度変調型ｍｏｓｆｅｔを備えた半導体装置
JP2629434B2 (ja) アノードショート伝導度変調型ｍｉｓｆｅｔを備えた半導体装置
JP2782758B2 (ja) 半導体集積回路
GB2596295A (en) Power semiconductor device with segmented MESA trenches
JPH10335655A (ja) 横型絶縁ゲート型バイポーラトランジスタ
JPH0964357A (ja) 誘電体分離型半導体装置
JPH0367347B2 (en])